KYOTO, Japan, Dec. 12, 2019 /PRNewswire/ -- OMRON Corporation
of Kyoto, western Japan globally released its new MOS FET (*1)
relay module "G3VM-21MT" on December 2,
2019. The product is the first electronic component in the
world (*2) to adopt a "T-type circuit structure" (*3). With T-type
circuit structure consisting of compact-size and longer-lifecycle
solid state relays that output signals using no physical contact,
the relay module minimizes the leakage current (*4) that has long
been a problem with semiconductor test equipment. G3VM-21MT allows
high-precision measurement and improves productivity of electronic
components.
G3VM-21MT enables switching measurement signals in test
equipment mainly used to perform electrical tests for semiconductor
devices. In addition to the MOS FET relay features of compact size
and longer lifecycle, G3VM-21MT is the world's first MOS FET relay
module with "T-type circuit structure" which consists of three MOS
FET relays that help reduce the leakage current to a minimal level
without affecting test equipment's inspection accuracy while
allowing high-precision measurement and decreasing maintenance
frequency of test equipment.
Amid the digital age where functions of electronic components
are getting diversified and production volume is increasing, there
is a growing need for higher performance of semiconductor test
equipment. Mechanical reed relays (*5), which have been used for a
part that performs high-precision measurement in semiconductor test
equipment, have extremely low leakage current but they require
replacement on a regular basis, maybe several times for every
single month due to wear and abrasion of the contacts that lead to
affecting measurement accuracy. Such maintenance work may
substantially affect production efficiency and so adoption of solid
state relays has been long desired for their longer lifecycle. So
far, MOS FET relays are considered not suitable for precise
electrical tests due to technological difficulty to reduce leakage
current in relation with its feature, and were not used in test
equipment which requires high reliability.
To meet these needs, by utilizing OMRON's technologies of
electronic components cultivated over many years, the company has
succeeded in commercializing the relay module product by adopting
the "T-type circuit structure" and significantly reducing leakage
current to a level lower than or equal to 1pA (one-trillionth part
of the ampere). The challenge in reducing leakage current in a
solid state relay as close to zero as possible eliminates leakage
current problem and improves test equipment reliability. Moreover,
by integrating long-life MOS FET relays into the relay module, it
allows for shorter downtime for maintenance which has been a
long-standing challenge for mechanical relays. With the launch of
G3VM-21MT, OMRON will strive to contribute to improving the
productivity of electronic components and support the evolution of
digital transformation in society.
Photo: G3VM-21MT
https://kyodonewsprwire.jp/prwfile/release/M102197/201912104531/_prw_PI1im_66X9x2Z2.jpg
(*1) MOS FET= Metal-Oxide-Semiconductor Field-Effect Transistor
(a type of field-effect transistor).
(*2) The world's first relay module (as of April 2019) adopting a "T-type circuit
structure" in which several different MOS FET relays are
combined, according to OMRON's own research.
(*3) A circuit structure commonly used in electronic devices,
such as an attenuator, to minimize leakage current.
(*4) A condition that occurs inside the electric circuit where
current leaks through the insulation, which otherwise should
have stopped electricity from passing through.
(*5) The two reeds with contacts located in the glass tube are
switched (open and close) by the magnetic flux of coil wrapped
around the glass tube.
Applications:
https://kyodonewsprwire.jp/prwfile/release/M102197/201912104531/_prw_PI5lg_3T7Yk73M.jpg
Features
1. High equipment reliability by reducing leakage current to 1pA
or less:
Leakage current has been a long-term disadvantage of
semiconductor relays and G3VM-21MT helps solve the problem by
minimizing the leakage to 1pA or less. G3VM-21MT successfully
achieved an actual leakage level lower than or equal to 0.1pA while
minimizing the impact on measurement accuracy of the
application.
https://kyodonewsprwire.jp/prwfile/release/M102197/201912104531/_prw_PI6lg_jTMA8F60.jpg
2. Longer lifecycle and significant decrease in maintenance
frequency:
The output circuit of the G3VM-21MT relay module consists of
semiconductor MOS FET relays using no physical contact, hence no
need to perform maintenance on the contacts for wear or abrasion as
there will be no arc discharge generated from opening and closure
of the circuit.
https://kyodonewsprwire.jp/prwfile/release/M102197/201912104531/_prw_PI7lg_4Ea0Ebu6.jpg
3. Reduced mounting space -- high-density mounting by
space-saving and wire-saving:
G3VM-21MT achieves compact size of 5mm x 3.75mm x 2.7mm by
incorporating the complex wiring diagram of input and output
circuits into the internal module, ultimately simplifying PCB
wiring of the application.
About OMRON Corporation
OMRON Corporation is a global leader in the field of automation
based on its core technology of "Sensing & Control + Think."
OMRON's business fields cover a broad spectrum, ranging from
industrial automation and electronic components to social
infrastructure systems, healthcare, and environmental solutions.
Established in 1933, OMRON has about 35,000 employees worldwide,
working to provide products and services in around 120 countries
and regions. For more information, visit OMRON's website:
https://www.omron.com/.
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SOURCE OMRON Corporation