NXP Advances 5G with New Gallium Nitride Fab in Arizona
29 Septiembre 2020 - 11:00AM
NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the grand
opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in
Chandler, Arizona, the most advanced fab dedicated to 5G RF power
amplifiers in the United States. The new internal factory combines
NXP’s expertise as the industry leader in RF power and its
high-volume manufacturing know-how, resulting in streamlined
innovation that supports the expansion of 5G base stations and
advanced communication infrastructure in the industrial, aerospace
and defense markets.
The opening ceremony was marked by keynote addresses and remarks
by NXP executives plus federal, state and local government
officials, including:
- Arizona Senators Kyrsten Sinema and Martha McSally
- U.S. Representative Greg Stanton
- Arizona Governor Doug Ducey
- City of Chandler Mayor Kevin Hartke
- U.S. Department of Commerce Deputy Under Secretary for
International Trade Joseph Semsar
- Ambassador of the Kingdom of the Netherlands to the United
States Andre Haspels
In his keynote address, Kurt Sievers, NXP CEO said: “Today marks
a critical milestone for NXP. By building this incredible facility
and tapping key talent in Arizona, we are able to bring focus to
GaN technology as part of driving the next generation of 5G base
station infrastructure.”
Gallium Nitride: The new gold
standard for 5GWith 5G, the density of RF
solutions required per antenna has exponentially increased – yet
maintaining the same box size and reducing power consumption is
mandatory. GaN power transistors have emerged as the new gold
standard to address these dueling requirements, delivering
significant improvements in both power density and efficiency.
Nearly 20 years of GaN development expertise and extensive
wireless communication industry knowledge uniquely position NXP to
lead this next wave of cellular expansion for 5G. The company has
deeply optimized its GaN technology to improve the electron
trapping in the semiconductor to deliver high efficiency and gain
with best-in-class linearity, all of which is focused on serving
NXP customers with the highest quality GaN device production.
Joakim Sorelius, Head of Development Unit Networks at Ericsson,
a longstanding NXP customer, commented: “We strive to deliver
industry leading products that provide maximum value to our
customers, where power amplifiers play an important part of the
radio technology. Similar to Ericsson’s recent US investments, we
are pleased to see NXP's investments in the U.S. semiconductor
process development with the continuous focus on improving RF
system performance for future high demanding radio networks."
State-of-the-art
fab draws on
NXP’s early GaN innovation and total
quality mindsetNXP’s strategic move to
build an internal GaN fab was driven by its ability to achieve
higher performance benefits through leveraging its core competency
in cellular infrastructure design, proven track record for
high-volume manufacturing and consistency and leadership in total
quality processes.
“I am excited by the opening of our new facility in Chandler as
it underscores NXP’s decades-long commitment to GaN and the
communications infrastructure market,” said Paul Hart, Executive
Vice President and GM of the Radio Power Group at NXP. “I would
like to thank our customers for their collaboration throughout the
years and the entire NXP team that has been instrumental in
creating the world’s most advanced RF GaN fab, which is designed
and ready to scale to 6G and beyond.”
The fab is set to ramp quickly with NXP leveraging its
Chandler-based team and their long-standing expertise in compound
semiconductor manufacturing. Arizona Governor Doug Ducey added:
“With this new state-of-the-art manufacturing facility in Chandler,
Arizona is set to expand its reputation as a high-tech
manufacturing hub and a pioneer in 5G innovation. We’re grateful to
NXP for bringing more jobs and investment to our state.”
The internal factory will serve as an innovation hub that
facilitates collaboration between the fab and NXP’s onsite R&D
team. NXP engineers can now more rapidly develop, validate and
protect inventions for current and future generations of GaN
devices, resulting in shorter cycle times for NXP GaN
innovations.
AvailabilityNXP’s new Chandler-based GaN fab is
qualified now, with initial products ramping in the market and
expected to reach full capacity by the end of 2020.
Watch the NXP RF GaN fab
openingClick here to watch keynote
addresses from NXP executives and government officials, tour the
fab, view GaN technical sessions, and watch a panel discussion on
5G with NXP’s RF leaders and industry analysts.
About NXP SemiconductorsNXP Semiconductors N.V.
enables secure connections for a smarter world, advancing solutions
that make lives easier, better, and safer. As the world leader in
secure connectivity solutions for embedded applications, NXP is
driving innovation in the automotive, industrial & IoT, mobile,
and communication infrastructure markets. Built on more than 60
years of combined experience and expertise, the company has
approximately 29,000 employees in more than 30 countries and posted
revenue of $8.88 billion in 2019. Find out more at www.nxp.com.
NXP and the NXP logo are trademarks of NXP B.V. All other
product or service names are the property of their respective
owners. All rights reserved. © 2020 NXP B.V.
For more information, please
contact:
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Europe |
Greater China / Asia |
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Jacey
Zuniga |
Jason
Deal |
Ming Yue |
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Tel: +1 512 895
7398 |
Tel: +44 7715228414 |
Tel: +86 21 2205 2690 |
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Email: jacey.zuniga@nxp.com |
Email: jason.deal@nxp.com |
Email: ming.yue@nxp.com |
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NXP-IoTNXP-Corp
Photos accompanying this announcement are available at:
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