NXP Releases the Industry’s Highest Power Density for RF LDMOS in Avionics
06 Junio 2017 - 2:30PM
IMS 2017 – NXP Semiconductors N.V. (NASDAQ:NXPI),
the leader in RF power, today announced the industry’s most compact
RF laterally diffused metal oxide semiconductor (LDMOS) solution
for the automatic dependent surveillance-broadcast (ADS-B) and
unmanned aerial vehicle (UAV) transponder markets. With more than
700 watts (W) of pulsed power packed in a 50 ohm power amplifier
half the size of a credit card, the AFV10700H meets the size,
weight, power and cost (SWaP-C) requirements of the aeronautics
industry.
The AFV10700H is based on NXP’s leading-edge Airfast technology
and is contained in a small NI-780 air cavity package, which
occupies 40 percent less space than the standard NI-1230 package
used by other LDMOS solutions of similar power level today. Its
highly integrated on-chip pre-matching delivers a high output
impedance that helps reduce the size of the matching circuitry,
enabling a 1.3″ x 2.6″ (3.3 x 6.6 cm) power amplifier.
Simultaneously, the industry-leading thermal resistance further
reduces the weight of the transponder by enabling smaller heatsink
designs.
“This new solution is an excellent example of NXP’s commitment
to develop compelling products that address the stringent
requirements in size and performance of L-Band pulsed
applications,” said Pierre Piel, senior director and general
manager for multimarket RF power at NXP. “High performance and ease
of use are the key pillars of our design philosophy.”
Designed for pulsed applications such as commercial automatic
dependent surveillance — broadcast (ADS-B), UAVs and military
identification, friend or foe (IFF), the device outputs 700 W P1dB
at 1090 megahertz (MHz) with 50 volts (V) and 56 percent
efficiency. If operated at 52 V, it can achieve 850 W P1dB at 1030
MHz with 52 percent efficiency. The low thermal impedance supports
high duty factor pulse trains, such as Mode-S Extended Length
Message (ELM) and Link 16.
The new offering further densifies NXP’s portfolio of 960-1215
MHz LDMOS transistors for avionics applications, which now
comprises 10 different power levels from 10-1300 W. This wide
offering provides RF designers with flexibility and options for
their transponder designs.
Availability and ShowcaseThe AFV10700H
transistor is in production now and is supported by a reference
circuit for 1030-1090 MHz narrowband operations. For more
information, visit www.nxp.com/AFV10700H.
NXP is showcasing the new transistor at the International
Microwave Symposium, June 6–8, in Honolulu, Booth 1132.
About NXP Semiconductors
NXP Semiconductors N.V. (NASDAQ:NXPI) enables secure connections
and infrastructure for a smarter world, advancing solutions that
make lives easier, better and safer. As the world leader in secure
connectivity solutions for embedded applications, NXP is driving
innovation in the secure connected vehicle, end-to-end security
& privacy and smart connected solutions markets. Built on more
than 60 years of combined experience and expertise, the company has
31,000 employees in more than 33 countries and posted revenue of
$9.5 billion in 2016. Find out more at www.nxp.com.
For more information, please contact:
Americas
Jacey Zuniga
Tel: +1 512-895-7398
Email: jacey.zuniga@nxp.com
Europe
Martijn van der Linden
Tel: +31 6 10914896
Email: martijn.van.der.linden@nxp.com
Greater China / Asia
Esther Chang
Tel: +886 2 8170 9990
Email: esther.chang@nxp.com
NXP Semiconductors NV (NASDAQ:NXPI)
Gráfica de Acción Histórica
De Sep 2024 a Oct 2024
NXP Semiconductors NV (NASDAQ:NXPI)
Gráfica de Acción Histórica
De Oct 2023 a Oct 2024