STMicroelectronics unveils new generation
of silicon carbide power technology tailored for next-generation EV
traction inverters
- Smaller, more efficient products to ramp-up in volumes through
2025 across 750V and 1200V classes, will bring the advantages of
silicon carbide beyond premium models to mid-size and compact
electric vehicles.
- ST plans to introduce multiple silicon carbide technology
innovations through 2027, including a radical innovation.
Geneva, Switzerland, September 24, 2024 –
STMicroelectronics (NYSE: STM), a global semiconductor
leader serving customers across the spectrum of electronics
applications, is introducing its fourth generation STPOWER silicon
carbide (SiC) MOSFET technology. The Generation 4 technology brings
new benchmarks in power efficiency, power density and robustness.
While serving the needs of both the automotive and industrial
markets, the new technology is particularly optimized for traction
inverters, the key component of electric vehicle (EV) powertrains.
The company plans to introduce further advanced SiC technology
innovations through 2027 as a commitment to innovation.
“STMicroelectronics is committed to driving the future of
electric mobility and industrial efficiency through our
cutting-edge silicon carbide technology. We continue to advance SiC
MOSFET technology with innovations in the device, advanced
packages, and power modules,” said Marco Cassis, President, Analog,
Power & Discrete, MEMS and Sensors Group. "Together with our
vertically integrated manufacturing strategy, we are delivering
industry leading SiC technology performance and a resilient supply
chain to meet the growing needs of our customers and contribute to
a more sustainable future."
As the market leader in SiC power MOSFETs, ST is driving further
innovation to exploit SiC’s higher efficiency and greater power
density compared to silicon devices. This latest generation of SiC
devices is conceived to benefit future EV traction inverter
platforms, with further advances in size and energy-saving
potential. While the EV market continues to grow, challenges remain
to achieve widespread adoption and car makers are looking to
deliver more affordable electric cars. 800V EV bus drive systems
based on SiC have enabled faster charging and reduced EV weight,
allowing car makers to produce vehicles with longer driving ranges
for premium models. ST’s new SiC MOSFET devices, which will be made
available in 750V and 1200V classes, will improve energy efficiency
and performance of both 400V and 800V EV bus traction inverters,
bringing the advantages of SiC to mid-size and compact EVs — key
segments to help achieve mass market adoption. The new generation
SiC technology is also suitable for a variety of high-power
industrial applications, including solar inverters, energy storage
solutions and datacenters, significantly improving energy
efficiency for these growing applications.
AvailabilityST has completed qualification of
the 750V class of the fourth generation SiC technology platform and
expects to complete qualification of the 1200V class in the first
quarter of 2025. Commercial availability of devices with nominal
voltage ratings of 750V and 1200V will follow, allowing designers
to address applications operating from standard AC-line voltages up
to high-voltage EV batteries and chargers.
Use casesST's Generation 4 SiC MOSFETs provide
higher efficiency, smaller components, reduced weight, and extended
driving range compared to silicon-based solutions. These benefits
are critical for achieving widespread adoption of EVs and leading
EV manufacturers are engaged with ST to introduce the Generation 4
SiC technology into their vehicles, enhancing performance and
energy efficiency. While the primary application is EV traction
inverters, ST's Generation 4 SiC MOSFETs are also suitable for use
in high-power industrial motor drives, benefiting from the devices'
improved switching performance and robustness. This results in more
efficient and reliable motor control, reducing energy consumption
and operational costs in industrial settings. In renewable energy
applications, the Generation 4 SiC MOSFETs enhance the efficiency
of solar inverters and energy storage systems, contributing to more
sustainable and cost-effective energy solutions. Additionally,
these SiC MOSFETs can be utilized in power supply units for server
datacenters for AI, where their high efficiency and compact size
are crucial for the significant power demands and thermal
management challenges.
RoadmapTo accelerate the development of SiC
power devices through its vertically integrated manufacturing
strategy, ST is developing multiple SiC technology innovations in
parallel to advance power device technologies over the next three
years. The fifth generation of ST SiC power devices will feature an
innovative high-power density technology based on planar structure.
ST is at the same time developing a radical innovation that
promises outstanding on-resistance RDS(on) value at high
temperatures and further RDS(on) reduction, compared to existing
SiC technologies.
ST will attend ICSCRM 2024, the annual scientific and industry
conference exploring the newest achievements in SiC and other wide
bandgap semiconductors. The event, from September 29 to October 04,
2024, in Raleigh, North Carolina will include ST technical
presentations and an industrial keynote on ‘High volume industrial
environment for leading edge technologies in SiC’. Find out more
here: ICSCRM 2024 - STMicroelectronics.
Technical Note to EditorsThe fourth generation
SiC MOSFETs from STMicroelectronics represent a significant leap
forward in power conversion technology compared to previous
generations. These devices are engineered to deliver superior
performance and robustness, addressing the stringent demands of
future EV traction inverters. The Generation 4 SiC MOSFETs feature
a significantly lower on-resistance (RDS(on)) measured against
prior generations, minimizing conduction losses, and enhancing
overall system efficiency. They offer faster switching speeds,
which translate to lower switching losses, crucial for
high-frequency applications and enabling more compact and efficient
power converters. The Generation 4 technology provides extra
robustness in Dynamic Reverse Bias (DRB) conditions, exceeding the
AQG324 automotive standard, ensuring reliable operation under harsh
conditions.
With Generation 4 ST continues to deliver outstanding RDS(on) x
die-area figure of merit to ensure high current-handling capability
with minimal losses. The average die size of Generation 4 devices
is 12-15% smaller than that of Generation 3, considering an RDS(on)
at 25 degrees Celsius, allowing for more compact power converter
designs, saving valuable space, and reducing system costs. The
improved power density of these devices supports the development of
more compact and efficient power converters and inverters,
essential for both automotive and industrial applications. In
addition, this is particularly beneficial for power supply units in
server datacenters for AI, where space and efficiency are critical
factors.
As an industry leader in this technology, ST has already
supplied STPOWER SiC devices for more than five million passenger
cars worldwide in a range of EV applications including traction
inverter, OBC (onboard charger), DC-DC converter, EV charging
station, and e-compressor application, significantly enhancing the
performance, efficiency, and range of NEVs. ST’s SiC strategy, as
an integrated device manufacturer (IDM), ensures quality and
security of supply to serve carmakers’ strategies for
electrification. With the recently announced fully vertically
integrated SiC substrate manufacturing facility in Catania,
expected to start production in 2026, ST is moving quickly to
support the rapid market transition towards e-mobility and higher
efficiency in industrial applications.
For further information about ST’s SiC portfolio, please visit
www.st.com/sic-mosfets
About STMicroelectronicsAt ST, we are over
50,000 creators and makers of semiconductor technologies mastering
the semiconductor supply chain with state-of-the-art manufacturing
facilities. An integrated device manufacturer, we work with more
than 200,000 customers and thousands of partners to design and
build products, solutions, and ecosystems that address their
challenges and opportunities, and the need to support a more
sustainable world. Our technologies enable smarter mobility, more
efficient power and energy management, and the wide-scale
deployment of cloud-connected autonomous things. We are committed
to achieving our goal to become carbon neutral on scope 1 and 2 and
partially scope 3 by 2027. Further information can be found at
www.st.com.
For further information, please
contact:INVESTOR RELATIONS:Céline BerthierGroup VP,
Investor RelationsTel: +41.22.929.58.12celine.berthier@st.com
MEDIA RELATIONS:Alexis
Breton Corporate
External CommunicationsTel:
+33.6.59.16.79.08alexis.breton@st.com
- C3283C - Sep 24 2024 -- SiC Gen4_FINAL FOR PUBLICATION
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